Method for forming oxide film in semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorDu Heon Song
Life of this patent
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Abstract
Method for forming an oxide film in a semiconductor device, is disclosed, which is suitable to form oxide films of different thicknesses in a device region, to which driving voltages of different levels are applied respectively, including the steps of providing a semiconductor substrate, forming an insulating film on the semiconductor substrate, injecting first, and second impurity ions into the semiconductor substrate through the exposed insulating film after masking required regions of the insulating film, removing the insulating film, and forming first, and second oxide films having thicknesses different from each other on regions of the semiconductor substrate having the impurity ions are injected and the impurity ions are not injected thereto, respectively.
Claims19
A method for forming an oxide film in a semiconductor device, comprising:
- providing a semiconductor substrate;
- forming an insulating film on the semiconductor substrate;
- injecting first, and second impurity ions into the semiconductor substrate through the exposed insulating film after masking required regions of the insulating film wherein the first impurity ions comprise nitrogen ions and the second impurity ions comprise fluorine ions;
- removing the insulating film;
- and,
- forming first, and second oxide films having thicknesses different from each other on regions of the semiconductor substrate having the impurity ions are injected and the impurity ions are not injected thereto, respectively.
A method for forming an oxide film in a semiconductor device, comprising:
- providing a semiconductor substrate;
- defining first, second and third regions of the semiconductor substrate;
- forming an insulating film on the semiconductor substrate;
- selectively masking the second, and third regions of the insulating film;
- injecting first nitrogen impurity ions into the first region of the semiconductor substrate through the insulating film;
- selectively masking the first, and second regions of the insulating film;
- injecting second impurity ions into the third region of the semiconductor substrate through the insulating film;
- removing the insulating film;
- and,
- forming first, second and third oxide films having thicknesses different from one another on the first, second and third regions of the semiconductor substrate, respectively.
A method for forming an oxide film in a semiconductor device, comprising:
- providing a semiconductor substrate;
- defining first, second and third regions of the semiconductor substrate;
- forming an insulating film on the semiconductor substrate;
- selectively masking the second, and third regions of the insulating film;
- injecting first impurity ions into the first region of the semiconductor substrate through the insulating film;
- selectively masking the first, and second regions of the insulating film;
- injecting second fluorine impurity ions into the third region of the semiconductor substrate through the insulating film;
- removing the insulating film;
- and,
- forming first, second and third oxide films having thicknesses different from one another on the first, second and third regions of the semiconductor substrate, respectively.
Dependencies are inferred from the claim text.