Process for producing multi-layer wiring structure

Abstract

Upon forming a groove and a connection hole by a dual damascene process, there is a problem in that the connection hole has a bowing shape, and it is difficult to form a shape of the connection hole in a good and stable manner. A process for producing a multi-layer wiring structure is provided, which comprises a step of forming an inter level dielectric film 15 covering a lower layer wiring 14; a step of forming a connection hole 16 in the inter level dielectric film 15 to reach the lower layer wiring 14; a step of forming an inter metal dielectric film 17 filling the connection hole 16 on the inter level dielectric film 15, with an insulating material having an etching rate larger than an etching rate of the inter level dielectric film 15; and a step of forming a concave part 18 in the inter metal dielectric film 17, and selectively re-opening the connection hole 16 with respect to the inter level dielectric film in such a manner that the connection hole is continuous to the concave part 18.

Dependencies are inferred from the claim text.