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US 6,191,021 B1Granted
Method of forming a low-resistance contact on compound semiconductor
AssigneeTriQuint Semiconductors Texas, Inc.
InventorsClyde R. Fuller, Joseph B. Delaney, Thomas E. Nagle
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Abstract
Generally, and in one form of the invention, a method is disclosed for forming an ohmic contact on a GaAs surface 20 comprising the steps of depositing a layer of InGaAs 22 over the GaAs surface 20, and depositing a layer of TiW 24 on the layer of InGaAs 22, whereby a reliable and stable electrical contact is established to the GaAs surface 20 and whereby Ti does not generally react with the In.
Claims13
A method comprising the steps of:
- forming a semiconductor surface;
- forming a layer of InGaAs over the semiconductor surface;
- and
- forming an electrical contact layer of TiW on the layer of InGaAs by sputtering TiW on the layer of InGaAs in an ambient gas sufficiently devoid of nitrogen to prevent a majority of Ti atoms at an interface between the layer of TiW and the layer of InGaAs from bonding with nitrogen.
1 more element
A method for fabricating an integrated circuit, comprising the steps of:
- forming a stack of semiconductor layers on a semiconductor substrate, the stack having a surface;
- forming a layer of InGaAs over the surface;
- forming an electrical contact layer of TiW on the layer of InGaAs by sputtering TiW on the layer of InGaAs in an ambient gas sufficiently devoid of nitrogen to prevent a majority of Ti atoms at an interface between the layer of TiW and the layer of InGaAs from bonding with nitrogen;
- forming metallization on selected portions of the layer of TiW, each selected portion having a boundary;
- and
- removing portions of the stack and the layers that lie outside of the boundaries to form mesas comprising the stack of semiconductor layers and the layer of InGaAs and the layer of TiW.
3 more elements
Dependencies are inferred from the claim text.