Method for forming a shallow junction in a semiconductor device using antimony dimer

A method for forming a shallow junction in a semiconductor device comprising the steps of:

• providing a semiconductor substrate having a predefined implant region therein;
• implanting an antimony dimer into the predefined implant region to form a shallow doped region,
• wherein the shallow doped region has a junction depth of about 5 to 80 nanometers, and
• wherein the shallow doped region has a surface concentration of at least 1.0 E13 ions per square centimeter.

A method for forming a shallow junction in a semiconductor device comprising the steps of:

• providing an antimony source material;
• creating antimony ions from the antimony source material;
• extracting a beam of antimony ions at an extraction voltage of about 1 to 30 KV to generate an antimony ion beam;
• analyzing the antimony ion beam to generate an antimony dimer ion beam;
• directing the antimony dimer ion beam at a semiconductor substrate;
• and
• forming a shallow doped antimony region in the semiconductor substrate,
• wherein the shallow doped region has a junction depth of about 5 to 80 nanometers.

A method for forming a shallow junction in a semiconductor device comprising the steps of:

• providing a semiconductor substrate having a surface and forming a gate electrode structure thereon,
• wherein the gate electrode has a first and a second side;
• forming a source region in the substrate adjacent to the first side of the gate electrode, and forming a drain region in the substrate adjacent to the second side of the gate electrode;
• forming an antimony dimer ion beam;
• and
• implanting antimony dimer ions into the source and drain regions to form source/drain extension regions therein,
• wherein the source/drain extension regions reside within the source and drain regions near the surface of the substrate surface.