Selective hemispherical grain silicon deposition

A method of increasing the selectivity of silicon deposition with regard to an underlying oxide layer during deposition of a silicon containing material by broadening a selective temperature of formation window for said silicon containing material by decreasing a lower temperature endpoint, said method comprising:

• providing a semiconductor wafer with said underlying oxide layer in a processing chamber;
• then
• heating said semiconductor wafer to a first temperature;
• then
• seeding said semiconductor wafer at said first temperature by exposing said semiconductor wafer to a germanium containing gas at pressures between 1−8 and 100 Torr;
• and then
• annealing said semiconductor wafer at a second temperature so as to grow said silicon containing material.

A method of increasing the selectivity of silicon deposition with regard to an underlying oxide layer during deposition of a silicon containing material by broadening a selective temperature of formation window for said silicon containing material by decreasing a lower temperature endpoint, said method comprising:

• providing a semiconductor wafer with said underlying oxide layer in a processing chamber;
• then
• heating said semiconductor wafer to a first temperature;
• then
• seeding said semiconductor wafer at said first temperature;
• introducing a chlorine containing precursor into said processing chamber during seeding in order to increase the selectivity of the silicon containing material to the underlying oxide layer by etching some silicon deposited during seeding from said underlying oxide layer;
• and then
• annealing said semiconductor wafer at a second temperature so as to grow said silicon containing material.

A method of increasing the selectivity of silicon deposition with regard to an underlying oxide layer during deposition of a silicon containing material by broadening a selective temperature of formation window for said silicon containing material by decreasing a lower temperature endpoint, said method comprising:

• providing a semiconductor wafer with said underlying oxide layer in a processing chamber;
• then
• heating said semiconductor wafer to a first temperature;
• seeding said semiconductor wafer at said first temperature;
• introducing hydrogen into said processing chamber during seeding in order to increase the selectivity of the silicon containing material to the underlying oxide;
• and then
• annealing said semiconductor wafer at a second temperature so as to grow said silicon containing material.