Process for producing semiconductor device
AssigneeSeiko Instruments Inc.
InventorsYutaka Saitoh, Jun Osanai
Life of this patent
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Abstract
A process for producing a semiconductor device comprises heat-treating an oxygen-containing silicon substrate in an inert atmosphere to change a concentration of oxygen contained in the silicon substrate to within a range of 5×1017/cm3 to 10×1017/cm3, and heat treating the silicon substrate in an oxidative atmosphere to form a silicon oxide film.
Claims15
A process for producing a semiconductor device, comprising the steps of:
- heat-treating a silicon substrate having an oxygen concentration of 14×1017/cm3 to 17×1017/cm3 in an inert gas to change the oxygen concentration of the silicon substrate to within a range of 5×1017/cm3 to 10×1017/cm3;
- and thereafter heat-treating the silicon substrate in an oxidative atmosphere.
A process for producing a semiconductor device, comprising the steps of:
- heat-treating a silicon substrate having an oxygen concentration of 14×1017\cm3 to 17×1017/cm3 in an inert gas at a temperature of 700° C. to 1,000° C.;
- and thereafter heat-treating the silicon substrate in an oxidative atmosphere.
A process for producing a semiconductor device, comprising the steps of:
- forming a silicon oxide film on a silicon substrate having an oxygen concentration of 14×1017/cm3 to 17×1017/cm3;
- forming a silicon nitride film on the silicon oxide film;
- removing a part of the silicon nitride film;
- and introducing a boron element into the silicon substrate at a portion thereof which is spaced apart by at least 0.5 μm from an end of the silicon nitride film in a planar direction of the silicon substrate.
A process for producing a semiconductor device, comprising the steps of:
- heat-treating an oxygen-containing silicon substrate in an inert atmosphere to change a concentration of oxygen contained in the silicon substrate to within a range of 5×1017/cm3 to 10×1017/cm3;
- and heat-treating the silicon substrate in an oxidative atmosphere to form a silicon oxide film on a surface of the silicon substrate having an improved dielectric breakdown voltage.
A process for producing a semiconductor device, comprising the steps of:
- providing a silicon substrate having a given oxygen concentration;
- subjecting the silicon substrate to a first heat treatment in an inert atmosphere to change the given oxygen concentration of the silicon substrate to 5×1017/cm3 to 10×1017/cm3;
- and thereafter subjecting the silicon substrate to a second heat treatment in an oxidative atmosphere.
Dependencies are inferred from the claim text.