MOS semiconductor device and method of manufacturing the same
AssigneeNEC Corporation
InventorsNaoki Kasai, Hiroki Koga
Life of this patent
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Abstract
A semiconductor device includes a first diffusion layer, an insulating film, and an electrode. The first diffusion layer is formed on the surface of a first-conductivity-type semiconductor substrate and has an opposite conductivity type. The insulating film is formed on the first diffusion layer. The electrode is made of a conductor layer formed on the insulating film. The width of the electrode is smaller than a value twice the length by which an impurity doped into the surface of the semiconductor substrate, using the electrode as a mask, laterally diffuses during annealing to a position immediately below the electrode.
Claims3
A method of fabricating a semiconductor device, comprising the steps of:
- forming an insulating film on a surface of a first-conductivity-type semiconductor substrate;
- forming an electrode made of a conductor layer on said insulating film;
- doping an impurity for forming a first diffusion layer of a conductivity type opposite to said first-conductivity-type semiconductor substrate into the surface of said first-conductivity-type semiconductor substrate by using said electrode as a mask;
- and
- performing annealing by which the impurity diffuses in a lateral direction to change the entire surface region of said first-conductivity-type semiconductor substrate in a region below said electrode into said second-conductivity-type diffusion layer.
A method of fabricating a semiconductor device, comprising the steps of:
- forming an insulating film on a surface of a first-conductivity-type semiconductor substrate;
- forming an electrode made of a conductor layer on said insulating film;
- and
- doping an impurity for forming a first diffusion layer of a conductivity type opposite to said first-conductivity-type semiconductor substrate into the surface of said first-conductivity-type semiconductor substrate in a region below said electrode by using rotatable tilted ion implantation.
Dependencies are inferred from the claim text.