Practical way to remove heat from SOI devices

A method of forming a silicon-on-insulator substrate, comprising:

• providing a first silicon substrate;
• depositing a metal based layer over the first silicon substrate;
• forming a first insulation layer over the metal based layer to provide a first structure;
• providing a second structure comprising a second silicon layer and a second insulation layer;
• bonding the first structure and the second structure together so that the first insulation layer is adjacent the second insulation layer;
• and
• removing a portion of the second silicon layer thereby providing the silicon-on-insulator substrate having a combined insulation layer having a thickness of about 100 Å to about 5,000 Å.
• wherein the metal based layer has a thickness that is one of less than 15% of the thickness of the combined insulation layer and greater than 50% of the thickness of the combined insulation layer, and
• wherein the metal based layer has a thickness from about 150 Å to about 500 Å.

A method of forming a silicon-on-insulator substrate, comprising:

• providing a first silicon substrate;
• depositing a metal based layer over the first silicon substrate;
• forming a first insulation layer over the metal based layer to provide a first structure;
• providing a second structure comprising a second silicon layer and a second insulation layer;
• bonding the first structure and the second structure together so that the first insulation layer is adjacent the second insulation layer;
• and
• removing a portion of the second silicon layer thereby providing the silicon-on-insulator substrate having a combined insulation layer having a thickness of about 100 Å to about 5,000 Å.
• wherein the metal based layer has a thickness that is one of less than 15% of the thickness of the combined insulation layer and greater than 50% of the thickness of the combined insulation layer, and
• wherein the metal based layer has a thickness from about 1,500 Å to about 3,500 Å.

A method of forming a silicon-on-insulator substrate, comprising:

• providing a first silicon substrate;
• depositing a metal based layer over the first silicon substrate;
• forming a first insulation layer over the metal based layer to provide a first structure;
• providing a second structure comprising a second silicon layer and a second insulation layer;
• bonding the first structure and the second structure together so that the first insulation layer is adjacent the second insulation layer;
• and
• removing a portion of the second silicon layer thereby providing the silicon-on-insulator substrate having a combined insulation layer having a thickness of about 100 Å to about 5,000 Å,
• wherein the metal based layer has a thickness that is one of less than 15% of the thickness of the combined insulation layer and greater than 50% of the thickness of the combined insulation layer, and
• wherein at least one of the first insulation layer and the second insulation layer comprise silicon dioxide.

A silicon-on-insulator substrate, comprising:

• a silicon substrate layer;
• a metal based layer comprising a metal silicide over the silicon substrate layer;
• an insulation layer over the metal based layer;
• a silicon device layer comprising silicon over the insulation layer;
• and
• at least one of
• at least one conductive plug through the insulation layer and the silicon device layer contacting the metal based layer, and
• at least one conductive plug through the silicon substrate layer contacting the metal based layer.