Method of tilted implant for pocket, halo and source/drain extension in ULSI dense structures

Abstract

A method of performing tilted implantation for pocket, halo and source/drain extensions in ULSI dense structures. The method overcomes the process limit, due to shadowing effects, in dense structures, of using large angle tilted implant techniques in ULSI circuits. A gate opening in an oxide layer is defined and partially filled by insertion of nitride spacers to define an actual gate window opening. The small angle tilted implant technique has the equivalent doping effect of large angle tilted implants, and circumvents the maximum angle limit (θMAX) that occurs in the large angle implant method. The small angle tilted implant technique also automatically provides self alignment of the pocket/halo/extension implant to the gate of the device.

Dependencies are inferred from the claim text.