Method of fabricating a high quality thin oxide
AssigneeZilog, Inc.
InventorsJohn E. Berg, Bernice L. Kickel, John A. Smythe, III
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Abstract
The present invention provides a method of forming a high quality thin oxide on a semiconductor body. A sacrificial oxide is formed on the semiconductor and then etched to eliminate the surface contamination of the semiconductor body. Then, an EEPROM oxide is formed following by an arsenic implant. Next the EEPROM oxide on the semiconductor body is then prepared by thin oxide growth. The thin oxide is preferably formed in a steam ambient. Subsequently, the oxide is annealed under nitrous oxide ambient using a combination of in-situ and RTP annealing process.
Claims28
A method for forming a high quality oxide on a semiconductor body, comprising the steps of:
- forming a sacrificial oxide layer on said semiconductor body by oxidizing said semiconductor body;
- doping at said sacrificial layer with arsenic through said sacrificial oxide and into said semiconductor body;
- etching said sacrificial oxide to expose said semiconductor body;
- forming a thin oxide layer on said semiconductor body by oxidizing said semiconductor body under a steam ambient, wherein said steam ambient comprises a mixture of hydrogen gas and oxygen gas;
- annealing said thin oxide layer under an argon ambient;
- annealing said thin oxide layer in-situ by supply a gas comprising nitrous oxide;
- and
- annealing said thin oxide layer using a rapid thermal processing under a nitrous oxide ambient, wherein said high quality oxide is formed.
A method for forming a high quality oxide on a semiconductor body, comprising the steps of:
- forming a thin oxide layer on said semiconductor body by oxidizing said semiconductor body under a steam ambient;
- annealing said thin oxide layer under an inert gas ambient;
- annealing said thin oxide layer in-situ under a first nitrous oxide ambient, and
- annealing said thin oxide layer using a rapid thermal processing under a second nitrous oxide ambient, wherein said high quality oxide is formed.
Dependencies are inferred from the claim text.