Method for manufacturing a liquid crystal display apparatus
AssigneeAdvanced Display Inc.
InventorsTadaki Nakahori, Masakuni Fujiwara, Harumi Yasuda
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Abstract
The present invention is directed to method for manufacturing a liquid crystal display apparatus in which a thin film transistor formed by successively depositing on a glass substrate a gate electrode, a gate insulating film, an active layer made of amorphous silicon, a source electrode and a drain electrode is used for driving liquid crystal. The method includes steps of: forming the gate electrode by patterning a gate metal layer coating the glass substrate by a wet etching process using an etchant containing cerium ammonium nitrate; removing an etching reaction product adhering on the substrate by washing it with a hydrofluoric acid solution; and forming the gate insulating film.
Claims5
Method for manufacturing a liquid crystal display apparatus in which a thin film transistor formed by successively depositing on a glass substrate a gate electrode, a gate insulating film, an active layer made of amorphous silicon, a source electrode and a drain electrode is used for driving liquid crystal, said method comprising steps of:
- forming the gate electrode by patterning a gate metal layer coating the glass substrate by a wet etching process using an etchant containing cerium ammonium nitrate;
- removing an etching reaction product adhering on the substrate by washing it with a hydrofluoric acid solution;
- and
- forming the gate insulating film.
Dependencies are inferred from the claim text.