US 6,190,947 B1Granted

Silicon semiconductor rectifier chips and manufacturing method thereof

AssigneeZowie Technology Corporation

InventorsChao-Chih Tai, El Pon Jone, Huei-Jeng Tsai

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Abstract

This invention is directed to a semiconductor rectifier chip comprised of a semiconductor dice with at least one P-N junction, and the entire cutting surface of the dice sealed a passivation glass to omite the use of a expansion plate. The rectifier chip is made of negative or positive silicon semiconductor wafer that has been subjected to standard wafer diffusion process to form P30 -N-N+ or N+-P-P+ layer construction, then to cut into a plurality of dices which having a cutting surface, the cutting surface from N30 to P+ of the dice is sealing by the passivation glass to omite the use of the expansion plate, and the electrode ohmic contact metal for soft soldering or hard brazing purpose is made on both sides of the dice simultaneously.

Claims4

Dependent claims

A method of manufacturing a rectifier chip with cutting surface sealed by passivation glass to omit the use of an expansion plate, which method comprising the following steps:

providing a semiconductor wafer with P-N junction;
cutting said wafer to a plurality of semiconductor dices with each of said dices having a cutting surface;
etching and polishing the cutting surface of said dice to dice with a smooth cutting surface and form a silicon dioxide film;
positioning said dices in a simplified fixture respectively and the cutting surface of each of said dices is applied with paste of passivation glass powder, said simplified fixture including a base plate with a plurality of locating points and a formed plate with a plurality of formed holes, the number of said formed holes of said formed plate being the same as the number of said locating points of said base plate.

1 more element

Dependencies are inferred from the claim text.