Method of manufacturing tandem type thin film photoelectric conversion device
AssigneeKaneka Corporation
InventorsMasashi Yoshimi, Yoshifumi Okamoto
Life of this patent
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Abstract
A p type semiconductor layer, an i type amorphous photoelectric conversion layer and an n type semiconductor layer of an amorphous type photoelectric conversion unit are formed in separate deposition chambers, respectively. A p type semiconductor layer, an i type crystalline photoelectric conversion layer and an n type semiconductor layer of crystalline type photoelectric conversion unit are formed continuously in one deposition chamber. Accordingly, a method of manufacturing a tandem type thin film photoelectric conversion device is obtained by which a tandem type thin film photoelectric conversion device having superior performance and high quality can be formed by a simple apparatus at a low cost with superior productivity.
Claims4
A method of manufacturing a tandem type thin film photoelectric conversion device, including an amorphous type photoelectric conversion unit and a crystalline type photoelectric conversion unit stacked on one another, wherein
- a p type semiconductor layer, an i type amorphous silicon-based photoelectric conversion layer and an n type semiconductor layer of said amorphous type photoelectric conversion unit are formed in different plasma CVD reaction chambers respectively, and a p type semiconductor layer, an i type crystalline silicon-based photoelectric conversion layer and an n type semiconductor layer of said crystalline type photoelectric conversion unit are formed in one plasma CVD reaction chamber.
A method of manufacturing a tandem type thin film photoelectric conversion device, including an amorphous type photoelectric conversion unit and a crystalline type photoelectric conversion unit stacked on one another, wherein a p type semiconductor layer, an i type amorphous silicon-based photoelectric conversion layer and an n type semiconductor layer of said amorphous type photoelectric conversion unit are formed in different plasma CVD reaction chambers respectively, and a p type semiconductor layer, an i type crystalline silicon-based photoelectric conversion layer and an n type semiconductor layer of said crystalline type photoelectric conversion unit are formed successively in order in one plasma CVD reaction chamber, and said p type semiconductor layer of said crystalline type photoelectric conversion unit is formed under a condition that a pressure in said reaction chamber is at least 5 Torr.
Dependencies are inferred from the claim text.