Epitaxially grown lead germanate film and deposition method
AssigneeSharp Laboratories of America, Inc.
InventorsTingkai Li, Fengyan Zhang, Yoshi Ono, Sheng Teng Hsu
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Abstract
The present invention provides a substantially single crystal PGO film with optimal the ferroelectric properties. The PGO film and adjacent electrodes are epitaxially grown to minimize mismatch between the structures. MOCVD deposition methods and RTP annealing procedures permit a PGO film to be epitaxially grown in commercial fabrication processes. These epitaxial ferroelectric have application in FeRAM memory devices. The present invention deposition method epitaxially grows ferroelectric Pb5Ge3O11 thin films along with c-axis orientation.
Claims17
In a lead germanium oxide (PGO) film, a method for epitaxially growing a PGO film on a semiconductor wafer, the method comprising the steps of:
- a) mixing and to form a PGO mixture having a molar ratio in the range of approximately 4.5:3 to 5.5:3;
- b) dissolving the mixture of Step a) with a solvent of tetrahydrofuran, isopropanol, and tetraglyme to form a precursor solution;
- c) from the solution formed in Step b), creating a precursor gas;
- d) decomposing the precursor gas formed in Step c) on the wafer;
- and
- e) epitaxially growing a PGO film, including a first phase of Pb5Ge3O11, whereby a homogeneous film with ferroelectric characteristics is formed.
Dependencies are inferred from the claim text.