System and method for providing a lithographic light source for a semiconductor manufacturing process

#This invention relates generally to photolithography in semiconductor manufacturing and more particularly to a system and method for providing a lithographic light source for a semiconductor manufacturing process.

#Photolithographic fabrication of semiconductor components, such as integrated circuits and dynamic random access memory chips, is customary in the semiconductor industry. In photolithographic fabrication, light may be used to cure or harden a photomask that is used to form a pattern of conductive, semiconductive, and insulative components in the semiconductor layer. The resulting pattern of conductive, semiconductive, and insulative components on the semiconductor layer form extremely small microelectronic devices, such as transistors, diodes, and the like. The microelectronic devices are generally combined to form various semiconductor components.

#The density of the microelectronic devices on the semiconductor layer may be increased by decreasing the size or geometry of the various conductive, semiconductive, and insulative components formed on the semiconductor layer. This decrease in size allows a larger number of such microelectronic devices to be formed on the semiconductor layer. As a result, the capability and speed of the semiconductor component may be greatly improved.

#For a more complete understanding of the present invention and its advantages, reference is now made to the following description taken in conjunction with the accompanying drawings, wherein like numerals represent like parts, in which:

#FIG. 1 is a drawing in section with portions broken away illustrating an emitted energy system in accordance with one embodiment of the present invention;

#FIG. 2A is a cross-section illustrating a nozzle in accordance with one embodiment of the present invention;

#FIGS. 1 through 5 illustrate an emitted energy system 10 in accordance with one embodiment of the present invention. As described in more detail below, the emitted energy system 10 may comprise a fluid system 12 and an energy system 14 that interact to produce a beam of emitted energy 16. The emitted energy 16 may be extreme ultraviolet light for use in photolithographic production of microelectronic devices in semiconductor components. The extreme ultraviolet light allows the economical fabrication of microelectronic devices having line widths smaller than 100 nanometers. Accordingly, the emitted energy system 10 increases the number of microelectronic devices that may be placed on a semiconductor layer, thereby increasing the potential capability and speed of a semiconductor component, such as an integrated circuit chip, memory chip, or the like.

#FIG. 1 is a block diagram illustrating an emitted energy system 10 in accordance with one embodiment of the present invention. In this embodiment, the emitted energy system 10 may be used to generate extreme ultraviolet light for use in photolithography. It will be understood that the emitted energy system 10 may be otherwise used without departing from the scope of the present invention. For example, the emitted energy system 10 may be used to produce other wavelengths of light and may be used in welding, machining, chemistry applications, biological research, materials research, communication systems, and the like. In addition, the emitted energy system 10 may be used in a combustion chamber to enhance burning or provide useful burning characteristics by supplying fuel, catalyst, oxygen or other substances.

#Referring to FIG. 1, the lithographic light source system or emitted energy system 10 comprises a fluid system 12 and an energy system 14 that interact to generate an emitted energy 16. The emitted energy 16 may be collected and directed by an output optics 18 to a target 20. It will be understood that the emitted energy system 10 may include other suitable components without departing from the scope of the present invention.