Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
AssigneeApplied Materials, Inc.
InventorsJohn C. Forster, Bradley O. Stimson, Zheng Xu
Life of this patent
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Abstract
A deposition system in a semiconductor fabrication system provides a slotted grounded darkspace shield, which protects the target sidewalls. It has been found that an axial slot in the grounded darkspace shield can prevent eddy currents from flowing in the darkspace shield and thereby prevent RF power losses due to eddy currents that would otherwise flow in an unslotted darkspace shield due to RF power applied to an RF coil-shield. By preventing the RF power losses, the RF coupling efficiency of RF power applied to the RF coil-shield can also be improved.
Claims28
An apparatus for energizing a plasma within a semiconductor fabrication system to sputter material from a target onto a substrate, the apparatus comprising:
- an RF signal source;
- a semiconductor fabrication chamber having a wall, a conductive darkspace shield positioned adjacent said target to shield a periphery of said target, and a plasma generation region adjacent to said target;
- and
- a coil-shield positioned within the chamber to protect at least a portion of the chamber wall from deposition materials, said coil-shield having a slot which defines first and second ends wherein one of said coil-shield ends is electrically coupled to said RF signal source and the other of said coil-shield ends is coupled to ground, said coil-shield being positioned to couple RF energy into said plasma generation region, to produce ions to ionize sputtered material, wherein said darkspace shield has a discontinuity of sufficient size to substantially reduce eddy currents from flowing in said darkspace shield in response to said RF energy coupled into said plasma generation region.
An apparatus for use with an RF signal source, for energizing a plasma within a semiconductor fabrication system to sputter material onto a substrate, the apparatus comprising:
- a semiconductor fabrication chamber having a wall, a target, a conductive darkspace shield positioned adjacent said target to shield periphery of said target, and a plasma generation region adjacent to said target and to said darkspace shield;
- and
- a coil-shield positioned within the chamber to protect at least a portion of the chamber wall from deposition materials, said coil-shield having a slot which defines first and second ends wherein one of said coil-shield ends is electrically coupled to said RF signals source and the other of said coil-shield ends is coupled to ground, said coil-shield being positioned adjacent said darkspace shield to couple RF energy into said plasma generation region, to produce ions sputtered material, wherein said darkspace shield defines a slot to substantially reduce eddy currents from flowing in said slotted darkspace shield in response to said RF energy coupled into said plasma generation region.
A method of depositing material on a substrate in a semiconductor processing chamber having a wall, the method comprising
- coupling RF energy from a coil-shield into a plasma to produce ions to ionize material sputtered from a target, said coil-shield having first and second terminals wherein one of said coil-shield terminals is electrically coupled to an RF signal source and the other terminal of said coil-shield is coupled to ground, and wherein said coil-shield is positioned within said chamber to protect at least a portion of said chamber wall from deposition materials;
- and
- reducing eddy current RF energy losses by providing a slotted darkspace shield positioned adjacent a target to shield a periphery of said target adjacent said plasma.
An apparatus for use with an RF signal source, for energizing a plasma within a semiconductor fabrication system to sputter material onto a substrate, the apparatus comprising:
- a semiconductor fabrication chamber having a wall, a target and a plasma generation region adjacent to said target;
- a coil-shield carried by said chamber and positioned within the chamber to protect at least a portion of the chamber wall from deposition materials and to couple RF energy into said plasma generation region, to produce ions to ionize sputtered material, said coil-shield having a slot which defines first and second ends wherein one of said coil-shield ends is electrically coupled to said RF signal source and the other of said coil-shield ends is coupled to ground;
- and
- a conductive darkspace shield positioned between said target and said coil-shield to shield a periphery of said target, said darkspace shield being positioned adjacent said coil-shield and having slot means for reducing eddy currents from flowing in said darkspace shield in response to said RF energy coupled into said plasma generation region.
Dependencies are inferred from the claim text.