Back to results
US 6,190,496 B1Granted
Plasma etch reactor and method for emerging films
AssigneeTegal Corporation
InventorsStephen P. DeOrnellas, Alferd Cofer, Robert C. Vail
Life of this patent
Estimating the term…
Abstract
A plasma etch reactor 20 includes a reactor chamber 22 with a grounded upper electrode 24, a lower electrode 28 which is attached to a high frequency power supply 30 and a low frequency power supply 32, and a peripheral electrode 26 which is located between the upper and lower electrode, and which is allowed to have a floating potential. Rare earth magnets 46, 47 are used to establish the magnetic field which confines the plasma developed within the reactor chamber 22. The plasma etch reactor 20 is capable of etching emerging films used with high density semiconductor devices.
Claims48
A plasma etch reactor comprising:
- a reactor chamber;
- a first electrode;
- a second electrode;
- a first power source connected to said second electrode which generates power at a first frequency;
- a second power source connected to said second electrode which generates power at a second frequency;
- said second electrode is associated with a chuck which is adapted for holding a wafer to be processed;
- said first power source generates power at a low frequency;
- said second power source generates power at a high frequency;
- and
- a third electrode connected to a third power source which generates power at a low frequency.
7 more elements
An enhanced plasma etch reactor comprising:
- a reactor chamber;
- a first electrode;
- a second electrode spaced from said first electrode;
- a first power source connected to said second electrode which generates power at a first frequency;
- a second power source connected to said second electrode which generates power at a second frequency;
- a plasma confinement device that is adapted to contain a plasma in the reactor;
- said second electrode is associated with a chuck which is adapted for holding a wafer to be processed;
- and
- a solid source of at least one gaseous species.
6 more elements
An enhanced plasma etch reactor comprising:
- a reactor chamber;
- a first electrode;
- a second electrode spaced from said first electrode;
- a first power source connected to said second electrode which generates power at a first frequency;
- a second power source connected to said second electrode which generates power at a second frequency;
- a plasma confinement device that is adapted to contain a plasma in the reactor;
- said second electrode is associated with a chuck which is adapted for holding a wafer to be processed;
- and
- a solid source of at least one gaseous species covering said first electrode.
6 more elements
An enhanced plasma etch reactor comprising:
- a reactor chamber;
- a first electrode;
- a second electrode;
- a first AC Dower source connected to said second electrode which generates power at a first frequency;
- a second AC power source connected to said second electrode which generates power at a second frequency;
- and
- a third DC power source connected to said second electrode.
4 more elements
A plasma etch reactor comprising:
- a reactor chamber:
- a first electrode;
- a second electrode;
- said first electrode is one of electrically floating or at ground;
- a first power source connected to said second electrode which generates power at a low frequency;
- a second power source connected to said second electrode which generates power at a high frequency;
- a plasma confinement device that is adapted to contain a plasma in the reactor;
- said second electrode is associated with a chuck which is adapted for holding a wafer to be processed;
- a third electrode connected to a third Dower source which generates power at a low frequency;
- said first power source, said second power source, and said third power source being AC power sources;
- and
- a fourth power source connected to said second electrode, said fourth power source being a DC power source.
9 more elements
An enhanced plasma etch reactor comprising:
- a reactor chamber;
- a first electrode;
- a second electrode spaced from said first electrode;
- a first power source connected to said second electrode which generates power at a first frequency;
- a second power source connected to said second electrode which generates power at a second frequency;
- said second electrode is associated with a chuck which is adapted for holding a wafer to be processed;
- and
- a solid source of at least one gaseous species.
5 more elements
An enhanced plasma etch reactor comprising:
- a reactor chamber;
- a first electrode;
- a second electrode spaced from said first electrode;
- a first power source connected to said second electrode which generates power at a first frequency;
- a second power source connected to said second electrode which generates power at a second frequency;
- said second electrode is associated with a chuck which is adapted for holding a wafer to be processed;
- and
- a solid source of at least one gaseous species covering said first electrode.
5 more elements
An enhanced plasma etch reactor comprising:
- a reactor chamber;
- a first electrode;
- a second electrode spaced from said first electrode;
- a first power source connected to said second electrode which generates power at a first frequency;
- a second power source connected to said second electrode which generates power at a second frequency;
- said second electrode is associated with a chuck which is adapted for holding a wafer to be processed;
- said reactor chamber including an upper wall, a lower wall, and a peripheral side wall which is located in between the upper wall and the lower wall;
- said second electrode located adjacent to said lower wall;
- a third electrode located adjacent to said peripheral side wall;
- said first power source generates power at a low frequency;
- said second power source generates power at a high frequency;
- and
- a third power source connected to said third electrode located adjacent to said peripheral wall, said third power source generates power at a low frequency.
10 more elements
Dependencies are inferred from the claim text.