Apparatus for low pressure chemical vapor depostion
OwnerChul-Ju Hwanginventor
Life of this patent
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Abstract
An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.
Claims3
An apparatus for a low pressure chemical vapor deposition, comprising:
- a wafer holder, said wafer holder being disposed above an upper portion of a susceptor body and having an assistant placement section, said assistant placement section including inner side sections adapted to receive circular sections of a wafer and being located slightly above a placement section, such that the wafer can be lifted and lowered by the inner side sections and placed on the placement sections, and said wafer holder is lifted and lowered in cooperation with lifting/lowering connection bars engaged by lifting/lowering drive means and a holder lifting/lowering bar having connecting bar connected between said lifting/lowering connection bars and the wafer holder.
Dependencies are inferred from the claim text.