Process kit
AssigneeApplied Materials, Inc.
InventorsTetsuya Ishikawa, Padmanabhan Krishnaraj, Kaveh Niazi, Hiroji Hanawa
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Abstract
The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
Claims23
A process kit for an electrostatic chuck comprising a shield comprising:
- a collar;
- a first conducting material disposed on a surface of the collar;
- a cover enclosing an outer edge of the collar;
- and
- a second conducting material disposed on a surface of the cover.
A wafer processing apparatus comprising:
- an electrically insulating element having a substantially planar surface for receiving a wafer;
- an electrically conducting element adjacent to a surface of the insulating element opposite the substantially planar surface;
- a ceramic collar circumscribing the insulating element;
- and
- a conducting material deposited on a surface of the collar.
A method for heating a process kit, comprising:
- covering an electrode with a ceramic collar having a conducting surface disposed thereon;
- and
- using an RF source to heat the conducting surface.
Dependencies are inferred from the claim text.