Synchronous semiconductor memory device having input circuit with reduced power consumption
AssigneeFujitsu Limited
InventorToshiya Uchida
Life of this patent
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AssigneeFujitsu Limited
InventorToshiya Uchida
Estimating the term…
To reduce wasteful power consumption at an input circuit without increasing in number of exterior wiring, there are provided command input circuits 24 and 26 for latching a command CMD on the rise of an internal clock CLK1, a command decoder for decoding the latched command, a chip select signal input circuits 41, 40 and 20 for activating an enable signal EN1 in response to activation of a chip select signal *CS, deactivating the EN1 in response to deactivation of the *CS after the next pulse of an external clock CLK and generating an internal chip select signal *CSC by synchronizing the *CS with the CLK, a clock input circuit 21 for passing through the CLK while the EN1 is active, and a D-flip-flop for generating a command data activating signal by synchronizing the internal chip select signal *CSC with the CLK1.
A synchronous semiconductor memory device comprising:
A synchronous semiconductor memory device operating in response to a clock signal, comprising:
Dependencies are inferred from the claim text.