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US 6,188,608 B1Granted
Nonvolatile semiconductor memory device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTakafumi Maruyama, Makoto Kojima
Life of this patent
Estimating the term…
Abstract
A nonvolatile semiconductor memory device includes: first and second memory cell blocks, each of the first and second memory cell blocks including at least one memory cell connected to a first word line; third and fourth memory cell blocks, each of the third and fourth memory cell blocks including at least one memory cell connected to a second word line; and an amplifier for inputting or outputting data through first and second bit lines. Each said memory cell block includes at least one dummy cell.
Claims11
A nonvolatile semiconductor memory device comprising:
- first and second word lines;
- first and second bit lines, each said bit line intersecting with both of the first and second word lines;
- first and second memory cell blocks, each of the first and second memory cell blocks including at least one memory cell connected to the first word line;
- third and fourth memory cell blocks, each of the third and fourth memory cell blocks including at least one memory cell connected to the second word line;
- first connection means for connecting the first bit line to the first memory cell block responsive to a first control signal;
- second connection means for connecting the second bit line to the second memory cell block responsive to a second control signal;
- third connection means for connecting the first bit line to the third memory cell block responsive to a third control signal;
- fourth connection means for connecting the second bit line to the fourth memory cell block responsive to a fourth control signal;
- and
- an amplifier for inputting or outputting data through the first and second bit lines,
- wherein each said memory cell block includes at least one dummy cell.
8 more elements
Dependencies are inferred from the claim text.