Back to results
US 6,188,606 B1Granted
Multi state sensing of NAND memory cells by varying source bias
AssigneeAdvanced Micro Devices, Inc.
InventorsNarbeh Derhacobian, Hao Fang, Michael Han
Life of this patent
Estimating the term…
Abstract
A method and circuit for sensing multi states of a NAND memory cell by varying source bias, at a constant gate voltage, preferably zero volts, generating a memory cell current in response to the source bias, and sensing the memory cell state.
Claims4
A method for sensing the state of a multi state of a NAND memory cell in a NAND array connected to a bit line, comprising the steps of:
- applying a source bias at the memory cell at a constant gate voltage;
- detecting a memory cell current, in response to the source bias voltage;
- and
- determining the NAND memory cell state corresponding to the memory cell current.
1 more element
A circuit for sensing multi states of a NAND memory cell comprising of:
- a NAND string of memory cells connected to an external bit line, wherein the memory cells are connected in series;
- a source for varying a source bias at a memory cell at a constant gate voltage of 0v;
- a sense node for sensing a memory cell current in response to the source bias;
- and
- a latch circuit to flip from a pre-conditioned state based upon a signal generated in response to the memory cell current.
2 more elements
Dependencies are inferred from the claim text.