Method for determining proximity effects on electrical characteristics of semiconductor devices
AssigneeAdvanced Micro Devices, Inc.
InventorsMark W. Michael, John L. Nistler
Life of this patent
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Abstract
The present invention is directed to a method for determining changes in electrical characteristics of semiconductor devices due to the fabrication of the devices in proximity to other devices or structures. The method comprises fabricating a plurality of semiconductor devices configured in a series arrangement and biasing all but one of the semiconductor devices to an active state. Thereafter, the remaining semiconductor device is biased to an active state and the electrical characteristics of the last semiconductor device is monitored.
Claims25
A method for exploring the electrical characteristics of semiconductor devices, comprising:
- fabricating a plurality of semiconductor devices above a semiconducting substrate, each of said semiconductor devices having electrical characteristics, said plurality of semiconductor devices configured in an electrical series;
- biasing all but one of said semiconductor devices to an active state and thereafter, biasing said one of said semiconductor devices to an active state;
- and
- monitoring the electrical characteristics of said one of said semiconductor devices.
A method for exploring the electrical characteristics of semiconductor devices, comprising:
- fabricating a plurality of transistors above a semiconducting substrate, each of said transistors having electrical characteristics, said plurality of transistors configured in an electrical series;
- biasing all but one of said transistors to an active state and thereafter, biasing said one of said transistors to an active state;
- and
- monitoring the electrical characteristics of said one of said transistors.
A method for exploring the electrical characteristics of semiconductor devices, comprising:
- fabricating a plurality of transistors above a semiconducting substrate, each of said transistors sharing at least one common source/drain region with an adjacent transistor and each of said transistors having electrical characteristics, said plurality of transistors configured in an electrical series, a first one of said transistors having a non-shared source region and a second one of said transistors having a non-shared drain region;
- biasing all but one of said transistors to an active state and, thereafter, biasing said one of said transistors to an active state;
- attaching a computer controlled electrical testing apparatus to said non-shared source region of said first transistor and to said non-shared drain region of said second transistor;
- and
- observing the electrical characteristics of said one of said transistors as indicated by said electrical testing apparatus.
Dependencies are inferred from the claim text.