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US 6,188,119 B1Granted
Semiconductor device having barrier metal layer between a silicon electrode and metal electrode and manufacturing method for same
AssigneeNEC Corporation
InventorsChihiro Ogawa, Yasuaki Hokari
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Abstract
A semiconductor device is disclosed that has a barrier metal layer between a silicon electrode and a metal electrode. For providing contacts on a charge transfer electrode made up of polysilicon, between the electrode and a shield film, which is a conductive film, without causing changes in channel potential or threshold voltage or influencing the charge transfer rate, a barrier metal layer composed of a metal silicide is provided between the shield film and the charge transfer electrode.
Claims9
A semiconductor device comprising:
- a first insulation film formed on a semiconductor substrate;
- a silicon electrode formed on said first insulation film and made up of polysilicon or single-crystal silicon;
- a second insulation film covering said silicon electrode except at an opening over said silicon electrode, said second insulation film contacting vertical sides of said silicon electrode and substantially all of a horizontal top surface of said silicon electrode except the opening;
- a barrier metal layer formed within a surface region of said silicon electrode that is exposed in said opening so that an upper surface of said barrier metal layer is essentially co-planar with an adjacent upper surface of said silicon electrode, and said barrier metal layer being made up of a metal silicide;
- a titanium film that is formed on said second insulation film;
- a titanium nitride film that is formed on said opening and on said titanium film and contacting said barrier metal layer;
- and
- a conductive film formed on said titanium nitride film.
5 more elements
A semiconductor device comprising:
- a first insulation film formed on a semiconductor substrate;
- a silicon electrode formed on said first insulation film and made up of polysilicon or single-crystal silicon;
- a second insulation film covering and contacting said silicon electrode except at an opening over said silicon electrode;
- a silicon layer in local contact with and over said silicon electrode at said opening, and made up of polysilicon or single-crystal silicon;
- a barrier metal layer contacting on the surface of said silicon layer, said barrier metal layer being composed of a metal silicide and having perimeter edges associated with and extending beyond perimeter edges of said silicon layer;
- and
- a conductive film formed on said barrier metal layer and said second insulation film.
4 more elements
Dependencies are inferred from the claim text.