Thin film transistor and a fabricating method thereof

Abstract

The present invention relates to a thin film transistor and a fabricating method thereof which improve device characteristics by forming a substance layer such as a vacuum layer or an air layer, which has a remarkable characteristic of insulation, on an active layer. The present invention includes an insulated substrate, an active layer on the insulated substrate wherein the active layer has a source region, a channel region and a drain region, a gate insulating layer having an inner space on the channel region, and a gate electrode on the gate insulating layer over the channel region. And, the present invention includes the steps of forming an active layer on an insulated substrate, forming a gate insulating layer having an inner space on the active layer, forming a gate electrode on the gate insulating layer, and forming a source region and a drain region in the active layer by doping the substrate including the active layer with impurities.

Dependencies are inferred from the claim text.