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AssigneeNikon Corporation
InventorsTadao Isogai, Satoshi Suzuki
Estimating the term…
A photoelectric conversion device comprises a semiconductor substrate, a same-dopant-type semiconductor layer, a photodiode having a charge-accumulation region, a JFET (which has a gate region, a source region, a channel region, and a drain region, the drain region electrically connected to the substrate 100), a transfer gate for transferring a charge from the photodiode to the gate region, and a reset drain having a charge-drain region for draining excess charges generated by the photodiode, the reset drain also controlling the electric potential of the gate region. Two overflow-control regions are included, one at the boundary between the charge-accumulation region and the charge-drain region within the device, one at the boundary between the charge-accumulation region and the charge-drain region of an adjacent device. Two reset gates are also provided, one at the boundary between the JFET gate and the reset drain within a device and one at the boundary between the JFET gate and a reset drain of an adjacent device. The layer is preferably more lightly doped relative to the substrate, such that sensitivity to longer wavelengths is increased. When used as a pixel in a pixel matrix, the device (and each pixel) may be surrounded by filled trenches extending downward from the top surface of the layer. The trenches may be filled so as to decrease the resistance between the substrate and the layer, and so as to reduce or eliminate cross-talk between pixels.
A photoelectric conversion device, comprising:
Dependencies are inferred from the claim text.