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US 6,188,089 B1Granted
Semiconductor imaging device
AssigneeSimage Oy
InventorKonstantinos E. Spartiotis
Life of this patent
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AssigneeSimage Oy
InventorKonstantinos E. Spartiotis
Estimating the term…
A semiconductor imaging device includes a semiconductor radiation detector substrate, for example of cadmium zinc telluride, with at least two faces. A first face has at least one charge output contact formed from electrically conductive material or materials and a second face having a contact formed from electrically conductive material or materials. The second face contact is for applying a bias voltage to provide an electric field between the first and second faces. The second face contact, or a third face of the semiconductor imaging device, or an edge between the second and third faces has deposited thereon at least a partial covering of a further material different from the electrically conductive material or materials of the second face contact. The deposited material can be a semiconductor, insulating or passivation material, for example aluminium nitride. Such a radiation detector can provide linear detector behaviour for all possible combinations of exposure and X-ray tube voltage.
A semiconductor imaging device for imaging high energy radiation comprising a semiconductor radiation detector substrate with at least two faces, a first face having at least one charge output contact formed from electronically conductive material or materials, a second face having a contact formed from electrically conductive material or materials, said second face contacts being for applying a bias voltage to provide an electric filed between said first and second faces, said second face contact having deposited thereon at least a partial covering of a further material different from said electrically conductive material or materials of said second face contact, the further material inhibiting saturation of said device during operation thereof.
A semiconductor imaging device for imaging high energy radiation comprising a semiconductor substrate with at least three faces, a first face having at least one charge collection contact formed from electrically conductive material or materials, a second face having a contact formed from electrically conductive material or materials, said second face contact being for applying a bias voltage to provide an electric field between said first and second faces, and a third face disposed transverse to said first and second faces and having deposited thereon at least a partial covering of a further material different from said electrically conductive material or materials of said second face contact, the further material inhibiting saturation of said device during operation thereof.
A semiconductor imaging device for imaging high energy radiation comprising a semiconductor substrate with at least three faces, a first face having at least one charge collection contact formed from electrically conductive material or materials, a second face having a contact formed from electrically conductive material or materials, said second face contact being for applying a bias voltage to provide an electric field between said first and second faces, and a third face disposed transverse to said first and second faces and which has a common edge with said first or second face, said common edge having deposited thereon at least a partial covering of a further material different from said electrically conductive material or materials of said second face contact, the further material inhibiting saturation of said device during operation thereof.
Dependencies are inferred from the claim text.