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US 6,188,087 B1Granted
Semiconductor light-emitting device
AssigneesToyoda Gosei Co., Ltd., Isamu Akasaki, Hiroshi Amano
InventorsNorikatsu Koide, Masayoshi Koike, Shiro Yamasaki, Isamu Akasaki, Hiroshi Amano
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Abstract
A novel light-emitting device includes a sapphire substrate with a light-emitting layer comprising InXGa1−XN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength λ of emitted light.
Claims28
A light-emitting device comprising:
- a sapphire substrate;
- and
- a light-emitting layer comprising InXGa1−XN with an indium mole fraction X and emitting light with a wavelength λ, wherein
- the indium mole fraction X and the wavelength λ approximately satisfy the following conditions:
- λ (nm)=1239.8/Eg (eV)
- Eg=3.4*(1−X)+1.95*X−4.26*X*(1−X), and
- said light-emitting layer has the indium mole fraction X ranging from about 0.13 to about 0.18 and emits blue light.
4 more elements
A light-emitting device comprising:
- a sapphire substrate;
- and
- a light-emitting layer comprising InXGa1−XN with an indium mole fraction X and emitting light with a wavelength λ, wherein
- the indium mole fraction X and the wavelength λ approximately satisfy the following conditions:
- λ (nm)=1239.8/Eg (eV)
- Eg=3.4*(1−X)+1.95*X−4.26*X*(1−X), and
- said light-emitting layer has the indium mole fraction X ranging from about 0.19 to about 0.26 and emits green light.
4 more elements
A semiconductor light-emitting device comprising:
- a sapphire substrate;
- and
- a light-emitting layer comprising InXGa1−XN with an indium mole fraction X and emitting light with a wavelength λ;
- wherein the indium mole fraction X and the wavelength λ of the emitted light approximately satisfy the following conditions:
- λ (nm)=1239.8/Eg (eV)
- Eg=3.4*(1−X)+1.95*X−4.26*X*(1−X).
3 more elements
A light-emitting device comprising:
- a sapphire substrate;
- and
- a light-emitting layer comprising InXGa1−XN with an indium mole fraction X and emitting light, wherein an energy level Eg of the emitted light is lower than an energy level calculated according to the following condition:
- Eg=3.4*(1−X)+1.95*X−1.0*X*(1−X).
1 more element
Dependencies are inferred from the claim text.