Diodes with quantum-wave interference layers

Abstract

A diode is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B, having at least one quantum-wave interference layer in a p-layer or an n-layer. The second layer B has wider band gap than the first layer W. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of quantum-wave wavelength of carriers in each of the first layer W and the second layer B existing around the lowest energy level of the second layer B. A δ layer, for sharply varying an energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. The quantum-wave interference layer functions as a reflecting layer of carriers for higher reflectivity.

Dependencies are inferred from the claim text.