Method for forming an insulating film
AssigneeUnited Silicon Incorporated
InventorsShih-Ming Lan, Chun-Liang Liu, Andrew Lin, Hsien-Liang Meng
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AssigneeUnited Silicon Incorporated
InventorsShih-Ming Lan, Chun-Liang Liu, Andrew Lin, Hsien-Liang Meng
Estimating the term…
A method for forming an insulating layer to solve a problem of non-uniform thickness of the insulating layer is provided. The method includes forming a first insulating layer over a substrate preferably by chemical vapor deposition (CVD) at an operation temperature of about 200° C.-350° C. The thickness of the first insulating layer is about 500 Å-5000 Å. A second insulating layer is formed over the first insulating layer preferably by CVD at a temperature of about 350° C.-500° C. The thickness of the second insulating layer is about 1000 Å-10000 Å. The first and the second insulating layers form together as an insulating layer to insulate transistors and isolation structures from the interconnect metal layer.
A method for forming an insulating layer, the method comprising:
A method for forming an insulating layer, the method comprising:
A method for forming an insulating layer comprising the steps of:
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