CVD plasma process to fill contact hole in damascene process
AssigneeAdvanced Micro Devices, Inc.
InventorsBhanwar Singh, Michael K. Templeton, Bharath Rangarajan, Christopher F. Lyons, Sanjay K. Yedur, Ramkumar Subramanian
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Abstract
The present invention relates to a method for fabricating interconnecting lines and vias in a layer of insulating material. A via is formed in the layer of insulating material. A protective material is formed so as to be conformal to at least edges and sidewalls of the via, the protective material facilitating shielding of at least the edges and sidewalls of the via from a trench etch step. The trench etch step is performed to form a trench opening in the insulating material. The via and trench are filled with a conductive metal.
Claims14
A method of fabricating interconnecting lines and vias in a layer of insulating material comprising the steps of:
- forming a via in the layer of insulating material;
- forming a protective material so as to be conformal to at least edges and sidewalls of the via, the protective material facilitating shielding of at least edges and sidewalls of the via from a trench etch step;
- and
- performing the trench etch step to form a trench opening in the insulating material the trench opening being formed above at least a portion of the via.
A method for fabricating interconnecting lines and vias in a layer of insulating material comprising the steps of:
- forming a first photoresist layer on the insulating material, the insulating material including at least one of:
- silicon oxide (SiO), silicon dioxide (SiO2), silicon nitride (Si3N4), (SiN), silicon oxynitride (SiOxNy), fluonated silicon oxide (SiOxFy), and polyimide(s);
- patterning the first photoresist layer to define a via;
- forming the via in the layer of insulating material;
- forming a protective material so as to be conformal to at least edges and sidewalls of the via, the protective material facilitating shielding of at least the edges and sidewalls of the via from a trench etch step, the protective material including at least one of:
- a nitride and a polymer;
- removing excess portions of the first photoresist layer and protective material;
- forming a second photoresist layer on the insulating material;
- patterning the second photoresist layer to define a trench;
- performing the trench etch step to form the trench in the insulating material;
- and
- filling the via and trench with a conductive metal.
Dependencies are inferred from the claim text.