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US 6,187,662 B1Granted
Semiconductor device with low permittivity interlayer insulating film and method of manufacturing the same
AssigneeNEC Corporation
InventorsTatsuya Usami, Noriaki Oda
Life of this patent
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Abstract
A semiconductor device includes a first insulating film formed on a semiconductor substrate. Wiring patterns are partially formed on the first interlayer insulating film. A second insulating film is formed to cover the first insulating film and the wiring patterns. A third insulating film is formed on the second insulating film. In this case, at least an upper surface portion of the first insulating film has a moisture containing percentage lower than that of the second insulating film.
Claims18
A semiconductor device comprising:
- a first interlayer insulating film formed on an upper surface portion of a semiconductor substrate;
- wiring patterns formed on an upper surface portion of said first interlayer insulating film;
- a second insulating film formed to cover exposed portions of said upper surface portion of said first insulating film and said wiring patterns;
- and
- a third insulating film formed covering said second insulating film, and
- wherein at least an upper surface portion of said first insulating film has a moisture containing percentage lower than that of said second insulating film.
3 more elements
Dependencies are inferred from the claim text.