Method for performing a pre-amorphization implant (PAI) which provides reduced resist protect oxide damage and reduced junction leakage
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJiann-Jong Wang, Ding-Dar Hu, Horng-Jer Hsiue, Ching-Kunn Huang
Life of this patent
Estimating the term…
Abstract
The present invention provides a method for performing a pre-amorphization implant which reduces damage to the resist protect oxide layer and reduces leakage current between the gate and substrate. Two novel approaches are provided, both of which use a photoresist mask to protect the RPO from implant damage during PAI. In the first approach, the PAI is performed immediately after RPO etching to form contact openings. Thus the original photoresist mask is still on the RPO. In the second approach, the photoresist mask is re-formed prior to PAI to protect the RPO from implant damage.
Claims12
A method for performing a pre-amorphization implant which reduces damage to a resist protect oxide layer and reduces leakage current between a gate and substrate comprising the steps of:
- a. depositing a resist protect oxide layer on a semiconductor structure;
- said semiconductor structure comprising a semiconductor substrate;
- b. forming a photoresist mask on said resist protect oxide layer;
- c. etching said resist protect oxide layer to form contact openings over areas not covered by said photoresist mask;
- d. implanting pre-amorphization impurity ions into said semiconductor substrate;
- whereby said photoresist mask prevents said impurity ions from penetrating said resist protect oxide layer;
- e. removing said photoresist mask;
- and
- f. forming self-aligned silicide regions in said contact openings.
A method for performing a pre-amorphization implant which reduces damage to a resist protect oxide layer and reduces leakage current between a gate and substrate comprising the steps of:
- a. depositing a resist protect oxide layer on a semiconductor structure;
- said semiconductor structure comprising a semiconductor substrate;
- b. forming a first photoresist mask on said resist protect oxide layer;
- c. etching said first resist protect oxide layer to form contact openings over areas not covered by said photoresist mask;
- d. removing said first photoresist mask;
- e. forming a second photoresist mask having the same pattern and location as said first photoresist mask;
- f. implanting pre-amorphization impurity ions into said semiconductor substrate;
- whereby said photoresist mask prevents said impurity ions from penetrating said resist protect oxide layer;
- g. removing said second photoresist mask;
- and
- h. forming self-aligned silicide regions in said contact openings.
Dependencies are inferred from the claim text.