Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region
AssigneeTexas Instruments Incorporated
InventorsMark S. Rodder, William U. Liu
Life of this patent
Estimating the term…
Abstract
A MOSFET (100) having a heterostructure raised source/drain region and method of making the same. A two layer raised source drain region (106) is located adjacent a gate structure (112). The first layer (106a) is a barrier layer comprising a first material (e.g., SiGe, SiC). The second layer (106b) comprises a second, different material (e.g. Si). The material of the barrier layer (106a) is chosen to provide an energy band barrier between the raised source/drain region (106) and the channel region (108).
Claims16
A method of forming a lateral transistor comprising the steps of:
- forming a gate structure over a defined channel region of a substrate;
- forming a barrier layer of a raised source drain region over a region of said substrate adjacent said channel region, said barrier layer comprising a silicon-carbide;
- and
- forming an upper layer of said raised source/drain region over said barrier layer, said upper layer comprising silicon, said silicon carbide providing an energy band barrier been said raised source/drain region and said channel region.
A method of forming a lateral transistor comprising the steps of:
- forming a gate structure over a defined channel region of a substrate, wherein the step of forming said gate structure comprising the steps of:
- forming a disposable gate over said defined channel region of a substrate;
- forming a dielectric layer over at least a portion of said upper layer of said raised source/drain region;
- selectively removing said disposable gate without substantially removing said dielectric layer;
- forming a gate dielectric over said defined channel region;
- and
- forming a gate electrode over said gate dielectric;
- forming a barrier layer of a raised source/drain region over a region of said substrate adjacent said channel region, said barrier layer comprising a first material;
- and
- forming an upper layer of said raised source/drain region over said barrier layer, said upper layer comprising a second material different from said first material, said first material providing an energy band barrier between said raised source/drain region and said channel region.
Dependencies are inferred from the claim text.