Method for fabricating semiconductor device and heat treatment apparatus

Abstract

In order to provide a method for fabricating semiconductor devices and a heat treatment apparatus in which stable annealing can be performed without causing harmful effects such as thermal stresses on an insulating substrate and the surface of a semiconductor thin film formed on the insulating substrate, in a heat treatment method for a substrate provided with an amorphous silicon film in the heating step, the substrate is preheated by irradiating the substrate from the side of one surface of the substrate with intermediate infrared rays having a wavelength band of 2.5 to 5 μm, and then, in the heat-treating step, the amorphous silicon film is annealed for crystallization at temperatures between 800 to 1,000° C. by irradiating the substrate from the side of the other surface of the substrate with near infrared rays having a wavelength band of 2.5 μm or less.

Dependencies are inferred from the claim text.