Ferromagnetic fine line and magnetic apparatus thereof

A ferromagnetic material comprising an atomic size array formed from a structure distributed with nonmagnetic atoms on a substrate, wherein said atomic size array is embedded in a protective layer made from nonmagnetic atoms, and an atomic cluster forming a basic unit has a flat section appearing in the vicinity of the Fermi level, for energy band dispersion in the direction of electrical conductivity.

A magnetoresistance effect element comprising an atomic size array formed from a structure distributed on a substrate with nonmagnetic atoms, wherein said atomic size array is embedded in a protective layer made from nonmagnetic atoms, a basic unit being an atomic cluster appearing at the state density peak in the vicinity of the Fermi level, and wherein one portion of said atomic size array is comprised of nonmagnetic material and another portion is comprised of ferromagnetic material.

An atomic level device showing a tunnel magnetoresistance effect and comprising an atomic size array formed from a structure distributed on a substrate with nonmagnetic atoms, wherein said atomic size array is embedded in a protective layer made from nonmagnetic atoms, a basic unit being an atomic cluster appearing at the state density peak in the vicinity of the Fermi level, and wherein said atomic size array further comprises electrodes embedded in close proximity.

An atomic level device showing a tunnel magnetoresistive effect and comprising an atomic size array formed from a structure distributed on a substrate with nonmagnetic atoms, wherein said atomic size array is embedded in a protective layer made from nonmagnetic atoms, a basic unit being an atomic cluster appearing at the state density peak in the vicinity of the Fermi level, and wherein said atomic size array further comprises surface electrodes embedded in close proximity.

An atomic level device showing a tunnel magnetoresistance effect and comprising an atomic size array formed form a structure distributed on a substrate with nonmagnetic atoms, wherein said atomic size array is embedded in a protective layer made from nonmagnetic atoms, a basic unit being an atomic cluster appearing at the state density peak in the vicinity of the Fermi level, and further comprising embedded electrodes or surface electrodes in close proximity to said atomic size array, wherein magnetization characteristics are caused by application of a voltage to said embedded electrodes or said surface electrodes.

An atomic level device showing a tunnel magnetoresistance effect and comprising an atomic size array formed from a structure distributed on a substrate with nonmagnetic atoms, wherein said atomic size array is embedded in a protective layer made from nonmagnetic atoms, a basic unit being an atomic cluster appearing at the state density peak in the vicinity of the Fermi level, an intermediate connection electrode pattern is formed by processing th e substrate surface previously made inert with dangling bonds, using a scanning tunnel microscope or a scanning probe microscope in a process to activate the dangling bond, and connecting an external electrode and said atomic size array by means of the intermediate connection electrode formed by depositing metal atoms.

A magnetic recording medium comprising an atomic size array formed from a structure distributed on a substrate with nonmagnetic atoms, wherein said atomic size array is embedded in a protective layer made from nonmagnetic atoms, a basic unit being an atomic cluster appearing at the state density peak in the vicinity of the Fermi level, and wherein said atomic size array further comprises a specific periodic type array of ferromagnetic material and nonmagnetic materials arrayed at specified intervals.