Back to results
US 6,187,253 B1Granted
Method of preparing indium oxide/tin oxide target for cathodic sputtering
AssigneeLeybold Material GmbH
InventorsMartin Schlott, Wolfgang Dauth, Martin Kutzner, Bruce Gehman, Shawn Vahlstrom
Life of this patent
Estimating the term…
Abstract
An indium oxide/tin oxide powder with 5-15 wt. % tin oxide is subjected to an annealing treatment at T≧1, 000° C. and is then partially reduced and subjected to hot isostatic pressing to produce a sputtering target with a density of at least 95% of the theoretical density and a thermal conductivity of at least 14 Wm−1K−1.
Claims1
A method for manufacturing an indium oxide/tin oxide sputtering target comprising:
- providing a powder consisting essentially of co-precipitated In2O3 and SnO2, said mixture containing 5-15% by wt. SnO2;
- annealing said mixture at a temperature of from 1350° C. to 1650° C. so that solid solutions of In2O3 and SnO2 are formed and that the grain size is in the range of 2 to 50 microns;
- partially reducing the annealed powder, and
- compacting the partially reduced annealed powder with hot isostatic pressing at a temperature above 800° C.
1 more element
Dependencies are inferred from the claim text.