Multiple station processing chamber and method for depositing and/or removing material on a substrate

Abstract

A multiple station processing chamber used to deposit and/or remove a material on a semiconductor wafer is described. The multiple station processing chamber is comprised of two or more processing stations at which the wafer is exposed to a processing fluid. The processing stations are positioned within the chamber such that the wafer may be moved from station to station while remaining within the chamber. Each station of the multiple station processing chamber may have a fluid containment ring used for containment, disposal, and/or reuse of the electrolyte used to process the wafer at that particular processing station. The wafer is brought to the first processing station on a wafer support and exposed to a first processing fluid, which is then diverted into fluid containment ring for the first processing station. The wafer is then moved to a second processing chamber where the process is repeated with a second processing fluid.

Dependencies are inferred from the claim text.