Method for manufacturing thin film photovoltaic device
AssigneeKaneka Corporation
InventorsMasashi Yoshimi, Kenji Yamamoto
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Abstract
A method for manufacturing a thin film photovoltaic device comprising a transparent conductive film, a thin film photovoltaic unit, and a back transparent conductive film and a back metal electrode which are successively formed on a substrate, wherein the back transparent conductive film is formed by sputtering comprising steps of forming an initial back transparent conductive film under a pressure of 5×10−2 Torr or more for 1 to 30 seconds in the initial stage and forming a main back transparent conductive film having the remainder thickness under a pressure reduced to {fraction (1/10)} the initial pressure or less.
Claims13
A method for manufacturing a thin film photovoltaic device comprising successively forming a transparent conductive film, a thin film photovoltaic unit, and a back transparent conductive film and a back metal electrode on a substrate, wherein the back transparent conductive film is formed by sputtering comprising steps of forming an initial back transparent conductive film under a pressure of 5×10−2 Torr or more for 1 to 30 seconds in an initial stage, and forming a main back transparent conductive film having the remainder thickness under a pressure reduced to {fraction (1/10)} the initial pressure or less in a second step.
A method for manufacturing a thin film photovoltaic device comprising successively forming a transparent conductive film, a thin film photovoltaic unit, and a back transparent conductive film and a back metal electrode on a substrate, wherein the back transparent conductive film is formed by sputtering comprising steps of forming an initial back transparent conductive film at a temperature of 100° C. or less for 1 to 30 seconds in an initial stage and forming a main back transparent conductive film having the remainder thickness at a higher temperature of 100° C. or more in a second step.
Dependencies are inferred from the claim text.