Thermal treatment apparatus
AssigneeTokyo Electron Limited
InventorHiroyuki Yamamoto
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AssigneeTokyo Electron Limited
InventorHiroyuki Yamamoto
Estimating the term…
In a thermal treatment apparatus 1 wherein semiconductor wafers W are accommodated in a treatment region A within a thermal treatment furnace 3 for wafers and a furnace entrance 2 is sealed, then the wafers W are subjected to a thermal treatment with a predetermined treatment gas at a predetermined treatment temperature and pressure, a purge gas introduction pipe 29 is provided on the side of the furnace entrance 2 and also a throttle mechanism 30 is provided between the treatment region A and the furnace entrance 2 for accelerating a purge gas to a speed that is faster than the speed of diffusion of the treatment gas, to generate a counterflow that prevents the treatment gas introduced upwards into the treatment region A from intruding into the side of the furnace entrance 2. This makes it possible to restrain the adhesion of reaction by-products onto portions around the furnace entrance 2.
A thermal treatment apparatus comprising:
A thermal treatment apparatus comprising:
A thermal treatment apparatus comprising:
Dependencies are inferred from the claim text.