Substrate processing device

A substrate processing device, comprising:

• a conveyor mechanism provided in a vacuum chamber for conveying a substrate thereon;
• a heating section provided within the vacuum chamber for heating the substrate;
• and
• a processing gas introduction section for introducing a processing gas to a processing zone within the vacuum chamber;
• wherein
• a surface of the substrate is consecutively subjected to a predetermined process by:
• introducing a flow of the processing gas from the processing gas introduction section into the processing zone;
• and conveying the substrate into and past the processing section by means of the conveyor mechanism while heating the substrate by means of the heating section, and wherein the substrate processing device further comprises:
• an inert gas supplying section provided in the vacuum chamber for supplying an inert gas for controlling the flow of the process gas, wherein the inert gas supplying section comprises a first inert supplying section, which substantially surrounds the processing zone and is approximately perpendicular to the substrate being conveyed by the conveyor mechanism, and a second inert gas supplying section, which is provided ahead of and behind, and is approximately parallel to the substrate being conveyed by the conveyor mechanism.