Semiconductor device and production thereof
AssigneeHitachi, Ltd.
InventorsHideo Miura, Shunji Moribe, Hisayuki Kato, Atsuyoshi Koike, Shuji Ikeda, Asao Nishimura
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Abstract
A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.
Claims11
A chemical vapor deposition apparatus for producing a semiconductor device using an in-situ doping technique, comprising:
- a reaction chamber,
- a gas introducing unit for introducing a raw material gas and an impurity into the reaction chamber,
- a unit for controlling film deposition in the reaction chamber, and
- a gas exhaust unit for exhausting gases from the reaction chamber,
- said unit for controlling film deposition comprising a unit for controlling an impurity concentration near an interface between an underlying film formed on a semiconductor substrate and a silicon film formed on the underlying film, and including gas introduction control structure which either
- (i) introduces the impurity gas, containing at least one element selected from the group III and V elements, together with the raw material gas after the introduction of only the raw material gas selected from SiH4 gas and Si2H6 gas for a first period of time, or
- (ii) introduces only the impurity gas, containing at least one element selected from group III and IV elements, for a second period of time before the introduction of the raw material gas selected from SiH4 gas and Si2H6 gas together with the impurity gas.
Dependencies are inferred from the claim text.