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US 6,185,237 B2Granted
Semiconductor laser
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsToshiya Fukuhisa, Masaya Mannoh, Isao Kidoguchi, Akira Takamori, Hideto Adachi
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Abstract
In a semiconductor laser including an active layer and a buried layer for absorbing laser light emitted from the active layer, an oscillation wavelength of the laser light is in a 650 nm band, an oscillation mode is a single transverse mode, and a peak of a light intensity distribution of the laser light is placed on the side opposite to the buried layer with respect to the center of the active layer.
Claims16
A semiconductor laser, comprising:
- a substrate;
- an active layer;
- and
- a buried layer for absorbing laser light emitted from the active layer formed on an opposite side of the active layer with respect to the substrate,
- wherein an oscillation wavelength of the laser light is in a 650 nm band and an oscillation mode is a single transverse mode, and
- a peak of a light intensity distribution of the laser light is displaced within the active layer on a side opposite to the buried layer with respect to a center of the active layer.
3 more elements
An optical disk device including:
- a semiconductor laser comprising:
- a substrate;
- an active layer;
- and
- a buried layer for absorbing laser light emitted from the active layer formed on an opposite side of the active layer with respect to the substrate,
- wherein an oscillation wavelength of the laser light is in a 650 nm band and an oscillation mode is a single transverse mode, and
- a peak of a light intensity distribution of the laser light is displaced within the active layer on a side opposite to the buried layer with respect to a center of the active layer;
- an optical system for collecting laser light emitted from the semiconductor laser onto a recording medium;
- and
- an optical detector for receiving reflected light from the recording medium.
7 more elements
A semiconductor laser, comprising:
- a substrate;
- an active layer;
- and
- a buried layer for absorbing laser light emitted from the active layer formed on an opposite side of the active layer with respect to the substrate,
- wherein an oscillation wavelength of the laser light is in a 630 nm band, and an oscillation mode is a single transverse mode, and
- a peak of a light intensity distribution of the laser light is displaced within the active layer on a side opposite to the buried layer with respect to a center of the active layer.
3 more elements
Dependencies are inferred from the claim text.