Method for doping sintered tantalum and niobium pellets with nitrogen
AssigneeVishay Sprague, Inc.
InventorYuri L. Pozdeev-Freeman
Life of this patent
Estimating the term…
Abstract
Doped tantalum and niobium pellets with nitrogen is described wherein the resulting pellets are substantially free of nitride precipitate on their outer surfaces. The tantalum and niobium pellets are formed by heating the pellets to a temperature of from about 600-1400° C. in a nitrogen gas atmosphere and then in a vacuum which causes nitrogen contacting a pellet to diffuse into the inner portion of the pellet instead of forming a precipitate. The resulting pellets have improved DCL stability and reliability in comparison to prior art nitrogen-doped tantalum and niobium pellets.
Claims5
A nitrogen-doped pellet having an inner portion and an outer surface comprising:
- particles selected from the group consisting of tantalum and niobium;
- and
- from about 1 atomic % to about 2 atomic % cumulative bulk oxygen and nitrogen content;
- wherein the outer surface is substantially free of nitride precipitate.
A niobium capacitor comprising:
- a porous core comprising niobium, nitrogen, and manganese;
- a niobium pentoxide dielectric film on said porous core;
- a layer comprising a conductive polymer on said dielectric film and;
- a layer comprising graphite and silver on said conductive polymer;
- wherein said dielectric film is substantially free of nitride precipitate.
Dependencies are inferred from the claim text.