Thin film transistor matrix with repairable bus line

A method of manufacturing a thin film transistor matrix having a plurality of thin film transistors disposed in a matrix form on an insulating substrate and each having a gate electrode, a source electrode and a drain electrode, a pixel electrode connected to the source electrode of each of the plurality of thin film transistors, a plurality of gate bus lines disposed as a whole along a row direction, and a plurality of drain bus lines disposed as a whole along a column direction, the method comprising the steps of:

• forming a first semiconductor layer on the insulating substrate;
• forming a first metal layer on the first semiconductor layer;
• and
• patterning the first metal layer and the first semiconductor layer to form the gate electrode and the gate bus line of the thin film transistor, wherein the first semiconductor layer is disposed directly under the first metal layer along substantially the entire length of the gate bus line.

A method of manufacturing a thin film transistor matrix having a plurality of thin film transistors disposed in a row and column matrix pattern on an insulating substrate and each having a gate electrode, a source electrode and a drain electrode, a pixel electrode connected to the source electrode of each of the plurality of thin film transistors, a plurality of gate bus lines disposed along a row direction, and a plurality of drain bus lines disposed along a column direction, the method comprising the steps of:

• forming a first metal layer on said insulating substrate;
• patterning said first metal layer to form said gate electrodes and said gate bus lines;
• forming a semiconductor layer on said insulating substrate;
• forming a second metal layer on said semiconductor layer;
• patterning a lamination of said second metal layer and said semiconductor layer to form said drain electrodes and said drain bus lines, the patterned second metal layer having a defect where the second metal layer does not exist or exists only partially;
• and
• selectively growing a third metal layer on the semiconductor layer exposed at said defect.