Methods of forming ferroelectric capacitors having a diffusion barrier layer
AssigneeHyundai Electronics Industries Co., Ltd.
InventorEung Youl Kang
Life of this patent
Estimating the term…
Abstract
Provided is a method for forming a ferroelectric capacitor of a semiconductor, which prevents the breakdown of a ferroelectric film induced from the out-diffusion of ingredients of the ferroelectric film. Using a thin film of SBT or Bi2O3 as a diffusion barrier layer capping the SBT ferroelectric film can prevent the breakdown of the ferroelectric film induced from the subsequently proceeded thermal treatment process at high temperature. As a result, the invention can decrease the fatigue of the device and enhance margin in the processes and the reliability of the device.
Claims6
A method for forming a ferroelectric capacitor of semiconductor which comprises the steps of:
- forming a lower electrode formed on top of a substrate;
- forming a ferroelectric film of SBT on the lower electrode;
- forming a SBT film as a diffusion barrier layer in order to prevent the out-diffusion of the ingredients or dopants of the SBT ferroelectric film;
- selectively etching the diffusion barrier SBT film to expose the SBT ferroelectric film;
- and
- forming an upper electrode contacted with the exposed SBT ferroelectric film.
A method for forming a ferroelectric capacitor of semiconductor which comprises the steps of:
- forming a lower electrode connected to a substrate;
- forming a ferroelectric thin film of SBT on the lower electrode;
- forming a thin film of Bi2O3 as a diffusion barrier layer in order to prevent the out-diffusion of the ingredients or dopants of the ferroelectric film;
- selectively etching the Bi2O3 thin film to expose the SBT ferroelectric film;
- and
- forming an upper electrode contacted with the exposed SBT ferroelectric film.
Dependencies are inferred from the claim text.