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US 6,184,626 B2Granted
Electron beam apparatus and method of driving the same
AssigneeCanon Kabushiki Kaisha
InventorHitoshi Oda
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AssigneeCanon Kabushiki Kaisha
InventorHitoshi Oda
Estimating the term…
An electron beam apparatus comprises an electron-emitting device, an anode separated from the electron-emitting device by a distance H (m), means for applying a voltage Vf (V) to the device, and means for applying a voltage Va (V) to the anode. The device has an electron-emitting region arranged between a lower potential side electroconductive thin film which is connected to a lower potential side electrode and a higher potential side electroconductive thin film which is connected to a higher potential side electrode. The device also has a film containing a semiconductor substance with a thickness not greater than 10 nm. The semiconductor-containing film extends on the higher potential side electroconductive thin film from the electron-emitting region toward the higher potential side electrode over a length L (m). The above Vf, Va, H and L satisfy the relationship L≧(1/π)·(Vf/Va)·H.
An electron beam apparatus comprising an electron-emitting device, an anode electrode, a first voltage applier, arranged to apply a voltage Vf(V) to said electron-emitting device and a second voltage applier, arranged to apply another voltage Va(V) to said anode,
An electron beam apparatus comprising an electron-emitting device, an anode electrode, a first voltage applier, arranged to apply a voltage Vf(V) to said electron-emitting device and a second voltage applier, arranged to apply an another voltage Va(V) to said anode electrode,
A method of driving an electron beam apparatus comprising an electron-emitting device having an electron-emitting region arranged between a lower potential side electrode and a higher potential side electrode and having an electron-scattering plane forming layer extending from said electron-emitting region to said higher potential side electrode by a distance L(m) on a surface thereof, wherein said electron-scattering plane forming layer elastically scatters electrons at an boundary plane between said surface of said electron-emitting device and said electron-scattering place forming layer, thereby making greater an emitting current as compared with that which would be obtained without said electron-scattering plane forming layer, and an anode electrode separated from said electron-emitting device by a distance H(m), comprising:
A method of driving an electron beam apparatus comprising an electron-emitting device comprising an electron emitting region arranged between a lower potential side electrode and a higher potential side electrode and having an electron-scattering plane forming layer comprising two layers of different materials and being extended from said electron-emitting region to said high potential side electrode by a distance L(m) on a surface thereof, wherein said electron-scattering plane forming layer scatters elastically electrons at a boundary plane between the two layers constituting said electron-scattering plane forming layer, thereby making greater an emitting current as compared with that which would be obtained without said electron-scattering plane forming layer, and an anode electrode separated from said electron-emitting device by a distance H(m), comprising:
Dependencies are inferred from the claim text.