Electron emission device with electron supply layer of hydrogenated amorphous silicon

An electron emission display device comprising:

• a pair of first and second substrates facing each other with a vacuum space in between;
• a plurality of electron emission devices provided on the first substrate;
• a collector electrode provided in the second substrate;
• and
• a fluorescent layer formed on the collector electrode, each of the electron emission devices comprising an electron-supply layer of hydrogenated amorphous silicon;
• an insulator layer formed on the electron-supply layer, said insulator layer having a film thickness of 50 nm or greater;
• and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, wherein each electron emission device emits electrons when an electric field is applied between the electron-supply layer and the thin-film metal.