Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices
AssigneesNovellus Systems, Inc., International Business Machines Corporation
InventorsThomas Weller Mountsier, Michael J. Shapiro
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Abstract
An interlevel dielectric stack for use in semiconductor devices is provided. The interlevel stack includes a bottom adhesion layer, a middle layer composed of a fluorinated amorphous carbon film, and a top adhesion layer. The bottom and top adhesion layers are composed of a silicon carbide material containing hydrogen. The dielectric stack is subjected to rigorous adhesion and thermal testing. A single continuous process for depositing the dielectric stack in a high density plasma reactor is also provided.
Claims4
An interlevel dielectric layer stack for a semiconductor device comprising:
- a bottom adhesion layer composed of a silicon carbide material containing hydrogen;
- a middle dielectric layer composed of fluorinated amorphous carbon film, wherein the fluorinated amorphous carbon film has an atomic fluorine content between 40% and 45%;
- and
- a top adhesion layer composed of a silicon carbide material containing hydrogen, the top adhesion layer also serving as a capping layer to contain gas discharge out of the fluorinated amorphous carbon film.
Dependencies are inferred from the claim text.