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US 6,184,567 B2Granted
Film capacitor and semiconductor package or device carrying same
AssigneeShinko Electric Industries Co., Ltd.
InventorsAkira Fujisawa, Tsuyoshi Shibamoto, Tsuyoshi Kobayashi, Shoji Watanabe, Yoshihiro Ihara
Life of this patent
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Abstract
A thin film capacitor comprises a substrate having first and second surfaces, a first electrode film formed on the first surface of the substrate, a high-dielectric film formed on the first electrode film, a second electrode film formed on said high-dielectric film, first and second external connection terminals formed on the second surface of the substrate opposite to the first surface on which the first electrode film is formed in such a manner that the first and second external connection terminals are electrically connected to the first and second electrode films, respectively.
Claims10
A thin film capacitor comprising:
- a substrate made of polyimide and having first and second surfaces;
- a plated layer of a nickel plated layer and a chrome plated layer as an underlayer of said nickel plated layer, said plated layer formed on said first surface of the substrate;
- a first electrode film formed on said plated layer on said first surface of the substrate;
- a high-dielectric film formed on said first electrode film;
- a second electrode film formed on said high-dielectric film;
- and at least one external connection terminal formed on said second surface of the substrate opposite to said first surface on which said first electrode film is formed in such a manner that said external connection terminal is electrically connected to said first electrode film.
3 more elements
A thin film capacitor comprising:
- a substrate made of an iron alloy and having first and second surfaces;
- a plated layer of a nickel film formed on said first surface of the substrate;
- a first electrode film formed on said plated layer on said first surface of the substrate;
- a high-dielectric film formed on said first electrode film;
- a second electrode film formed on said high-dielectric film;
- and
- at least one external connection terminal formed on said second surface of the substrate opposite to said first surface on which said first electrode film is formed in such a manner that said external connection terminal is electrically connected to said first electrode film.
4 more elements
A semiconductor device comprising:
- a package comprising:
- a package body having a surface, at least a power supply line and a ground line being formed on said surface;
- a thin film capacitor comprising:
- a substrate having first and second surfaces;
- a first electrode film formed on said first surface of the substrate;
- a high-dielectric film formed on said first electrode film;
- a second electrode film formed on said high-dielectric film;
- and at least one external connection terminal formed on said second surface of the substrate opposite to said first surface on which said first electrode film is formed in such a manner that said external connection terminal is electrically connected to said first electrode film;
- said thin film capacitor being mounted on said power supply line or ground line on said package body in such a manner that said external connection terminal of the thin film capacitor is electrically connected to one of said power supply and ground lines;
- a semiconductor chip having at least a power supply pad and a ground pad, said semiconductor chip being mounted on said package in such a manner that said second electrode film of the thin film capacitor is electrically connected to one of said power supply and ground pads by means of wire bonding;
- and
- a sealing material hermetically sealing said semiconductor chip on said package.
9 more elements
A thin film capacitor comprising:
- a substrate made of polyimide and having first and second surfaces;
- a plated layer of a nickel plated layer and a chrome plated layer as an underlayer of said nickel plated layer, said plated layer formed on said first surface of the substrate
- a first electrode film formed on said plated layer on said first surface of the substrate;
- a high-dielectric film formed on said first electrode film;
- a second electrode film formed on said high-dielectric film;
- first and second external connection terminals formed on said second surface of the substrate opposite to said first surface on which said first electrode film is formed in such a manner that said first and second external connection terminals are electrically connected to said first and second electrode films, respectively.
3 more elements
A thin film capacitor comprising:
- a substrate made of an iron alloy and having first and second surfaces;
- a plated layer of a nickel film, said plated layer formed on said first surface of the substrate;
- a first electrode film formed on said plated layer on said first surface of the substrate;
- a high-dielectric film formed on said first electrode film;
- a second electrode film formed on said high-dielectric film;
- and
- first and second external connection terminals formed on said second surface of the substrate opposite to said first surface on which said first electrode film is formed in such a manner that said first and second external connection terminals are electrically connected to said first and second electrode films, respectively.
4 more elements
A semiconductor device comprising:
- a package comprising:
- a package body on which at least a power supply line and a ground line are formed;
- a thin film capacitor comprising:
- a substrate having first and second surfaces;
- a first electrode film formed on said first surface of the substrate;
- a high-dielectric film formed on said first electrode film;
- a second electrode film formed on said high-dielectric film;
- and first and second external connection terminals formed on said second surface of the substrate opposite to said first surface on which said first electrode film is formed in such a manner that said first and second external connection terminals are electrically connected to said first and second electrode films, respectively;
- a semiconductor chip having at least a power supply pad and a ground pad, said semiconductor chip being mounted on said package by a flip-chip connection and in such a manner that said second electrode of the thin film capacitor is electrically connected to one of said power supply and ground pads;
- said thin film capacitor being mounted on said package body in such a manner that said first and second external connection terminals of the thin film capacitor are electrically connected to said power supply and ground lines, respectively, and so that said thin film capacitor is located in a space between said package body and said semiconductor chip;
- and
- a sealing material hermetically sealing said semiconductor chip on said package.
9 more elements
A semiconductor device comprising:
- a semiconductor package;
- a semiconductor chip mounted on said package by a flip-chip connection and having at least a power supply pad and a ground pad;
- a thin film capacitor comprising:
- a substrate having first and second surfaces;
- a first electrode film formed on said first surface of the substrate;
- a high-dielectric film formed on said first electrode film;
- a second electrode film formed on said high-dielectric film;
- and first and second external connection terminals formed on said second surface of the substrate opposite to said first surface on which said first electrode film is formed in such a manner that said first and second external connection terminals are electrically connected to said first and second electrode films, respectively;
- and
- said thin film capacitor being mounted on said package in such a manner that said first and second external connection terminals of the thin film capacitor are electrically connected to said power supply and ground lines, respectively, and said thin film capacitor is located in a space between said package body and said semiconductor chip.
7 more elements
Dependencies are inferred from the claim text.